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UPD431000ACZ-70LL Datasheet(PDF) 1 Page - NEC |
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UPD431000ACZ-70LL Datasheet(HTML) 1 Page - NEC |
1 / 32 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1990, 1993, 1995 MOS INTEGRATED CIRCUIT µPD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT DATA SHEET Document No. M11657EJBV0DS00 (11th edition) Date Published April 2002 NS CP (K) Printed in Japan The mark 5 shows major revised points. Description The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In addition to this, A and B versions are low voltage operations. The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4 mm) and (8 × 20 mm). Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = 0 to 70 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enable input for easy application • Two Chip Enable inputs: /CE1, CE2 Part number Access time Operating supply Operating ambient Supply current ns (MAX.) voltage temperature At operating At standby At data retention V °C mA (MAX.) µA (MAX.) µA (MAX.) Note1 µPD431000A-xxL 70, 85 4.5 to 5.5 0 to 70 70 100 15 µPD431000A-xxLL 20 3 µPD431000A-Axx 70 Note2, 100 3.0 to 5.5 35 Note3 13 Note5 µPD431000A-Bxx 70 Note2, 100, 120, 150 2.7 to 5.5 30 Note4 11 Note6 Notes 1. TA ≤ 40 °C 2. VCC = 4.5 to 5.5 V 3. 70 mA (VCC > 3.6 V) 4. 70 mA (VCC > 3.3 V) 5. 20 µA (VCC > 3.6 V) 6. 20 µA (VCC > 3.3 V) |
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