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PSMN002-25P Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PSMN002-25P
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN002-25P Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 22 October 2001
5 of 13
9397 750 08315
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C25
−−
V
Tj = −55 °C22
−−
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.4
−−
V
Tj = −55 °C
−−
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
0.02
1
µA
Tj = 175 °C
−−
500
µA
IGSS
gate-source leakage current
VGS = ±15 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
VGS =5V; ID =25A; Figure 7 and 8
Tj =25 °C
2.45
2.9
m
Tj = 175 °C
4.7
5.2
m
VGS =10 V; ID =25A; Figure 7 and 8
Tj =25 °C
2.2
2.6
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 75 A; VDD =15V; VGS =5V;
Figure 13
140
nC
Qgs
gate-source charge
34
nC
Qgd
gate-drain (Miller) charge
60
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz;
Figure 11
10400
pF
Coss
output capacitance
2380
pF
Crss
reverse transfer capacitance
1650
pF
td(on)
turn-on delay time
VDD =15V; ID = 12 A; VGS =5V;
RG =6 Ω; resistive load
53
ns
tr
turn-on rise time
175
ns
td(off)
turn-off delay time
355
ns
tf
turn-off fall time
285
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12
0.85
1.2
V


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