PBSS8110T datasheet(7/12 Pages) PHILIPS

Part #	PBSS8110T

Description	100 V, 1 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 12 page

2003 Dec 22

7

Philips Semiconductors

Product speciﬁcation

100 V, 1 A

NPN low VCEsat (BISS) transistor

PBSS8110T

mle352

0

600

200

400

10−1

110

IC (mA)

hFE

102

103

104

(1)

(3)

(2)

Fig.5

DC current gain as a function of collector

current; typical values.

VCE =10V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLE362

0

1.2

0.4

0.8

10−1

110

IC (mA)

VBE

(V)

102

103

104

(1)

(3)

(2)

Fig.6

Base-emitter voltage as a function of

collector current; typical values.

VCE =10V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

1

10−1

110

102

103

104

10−2

10−1

MLE366

IC (mA)

VCEsat

(V)

(1)

(2)

(3)

Fig.7

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

1

10−1

110

102

103

104

10−2

10−1

MLE353

IC (mA)

VCEsat

(V)

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

Tamb =25 °C.

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