NTD24N06T4G datasheet(6/8 Pages) ONSEMI

Part #	NTD24N06T4G

Description	Power MOSFET 60 V, 24 A, N-Channel DPAK

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NTD24N06

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SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 13. Thermal Response

1

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

0

25

50

75

100

125

40

ID = 18 A

10

175

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

80

200

VGS = 20 V

SINGLE PULSE

TC = 25°C

120

1 ms

100 ms

10 ms

dc

10 ms

150

160

t, TIME (ms)

0.1

1.0

0.01

0.1

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1.0E+00

1.0E+01

1.0E−01

1.0E−02

1.0E−03

1.0E−04

1.0E−05

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NTD24N06T4G Datasheet(PDF) 6 Page - ON Semiconductor

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