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NLSF3T12 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NLSF3T12
Description  Quad Bus Buffer
Download  8 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NLSF3T12 Datasheet(HTML) 2 Page - ON Semiconductor

   
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NLSF3T125
http://onsemi.com
2
Figure 2. QFN − 16 Pinout (Top View)
Y2
GND
Y3
A3
A1
OE1VCC
OE4
A4
Y4
Y1
NC
OE2
A2
NC
OE3
Exposed Pad (EP)
1
3
4
5
678
9
10
11
12
13
14
15
16
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
Output in 3−State
High or Low State
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current (VOUT < GND; VOUT > VCC)
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
QFN Packages
500
mW
Tstg
Storage Temperature
– 65 to + 150
°C
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. Functional operation
should be restricted to the Recommended Operating Conditions.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
Vin
DC Input Voltage
0
5.5
V
Vout
DC Output Voltage
Output in 3−State
High or Low State
0
0
5.5
VCC
V
TA
Operating Temperature
− 40
+ 85
°C
tr, tf
Input Rise and Fall Time
VCC = 5.0 V ±0.5 V
0
20
ns/V
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.


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