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NTE18 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE18
Description  Silicon Complementary Transistors High Voltage, High Current Capacity Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE18 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE18 (NPN) & NTE19 (PNP)
Silicon Complementary Transistors
High Voltage, High Current Capacity Driver
Applications:
D Drivers for Amplifiers of up to PO = 60W
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
700mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (Note 1)
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ
+135
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +135°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. PW = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 2mA
80
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 50µA
80
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 50µA
5
V
Collector Cutoff Current
ICBO
VCB = 50V
0.5
µA
Emitter Cutoff Current
IEBO
VEB = 4V
0.5
µA
DC Current Gain
hFE
VCE = 3V, IC = 100mA
120
270
Collector Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
200
400
mV
Transition Frequency
NTE18
fT
VCE = 10V, IC = 50mA
120
MHz
NTE19
100
MHz
Output Capacitance
NTE18
Cob
VCB = 10V, IE = 0, f = 1MHz
10
pF
NTE19
14
20
pF


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