HZC24 datasheet(2/6 Pages) HITACHI

Part #	HZC24

Description	Silicon Epitaxial Planar Zener Diode for Surge Absorb

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2 / 6 page

HZC Series

Rev.1, Jan. 2002, page 2 of 6

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Power dissipation

Pd *

1

150

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. See Fig2.

Electrical Characteristics

(Ta = 25°C)

Zener voltage

Reverse current

Dynamic resistance

ESD-Capability *

2

V

Z (V) *

1

Test

Condition

I

R (µ

µµµA)

Test

Condition

r

d (Ω

Ω

Ω)

Test

Condition

— (kV) *

2

Type

Min

Max

I

Z (mA)

Max

V

R (V)

Max

I

Z (mA)

Min

HZC2.0

1.90

2.20

5

120.0

0.5

100

5

30

HZC2.2

2.10

2.40

5

120.0

0.7

100

5

30

HZC2.4

2.30

2.60

5

120.0

1.0

100

5

30

HZC2.7

2.50

2.90

5

120.0

1.0

110

5

30

HZC3.0

2.80

3.20

5

50.0

1.0

120

5

30

HZC3.3

3.10

3.50

5

20.0

1.0

130

5

30

HZC3.6

3.40

3.80

5

10.0

1.0

130

5

30

HZC3.9

3.70

4.10

5

10.0

1.0

130

5

30

HZC4.3

4.01

4.48

5

10.0

1.0

130

5

30

HZC4.7

4.42

4.90

5

10.0

1.0

130

5

30

HZC5.1

4.84

5.37

5

5.0

1.5

130

5

30

HZC5.6

5.31

5.92

5

5.0

2.5

80

5

30

HZC6.2

5.86

6.53

5

2.0

3.0

50

5

30

HZC6.8

6.47

7.14

5

1.0

3.5

30

5

30

HZC7.5

7.06

7.84

5

1.0

4.0

30

5

30

HZC8.2

7.76

8.64

5

0.5

5.0

30

5

30

HZC9.1

8.56

9.55

5

0.5

6.0

30

5

30

HZC10

9.45

10.55

5

0.5

7.0

30

5

30

HZC11

10.44

11.56

5

0.5

8.0

30

5

30

Notes: 1. Tested with pulse (Pw = 40 ms).

2. C =150 pF, R = 330

Ω, Both forward and reverse direction 10 pulse

Failure criterion ; According to IR spec

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