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HZC22 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HZC22
Description  Silicon Epitaxial Planar Zener Diode for Surge Absorb
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HZC22 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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HZC Series
Rev.1, Jan. 2002, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd *
1
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. See Fig2.
Electrical Characteristics
(Ta = 25°C)
Zener voltage
Reverse current
Dynamic resistance
ESD-Capability *
2
V
Z (V) *
1
Test
Condition
I
R
µµµA)
Test
Condition
r
d (Ω
Ω)
Test
Condition
— (kV) *
2
Type
Min
Max
I
Z (mA)
Max
V
R (V)
Max
I
Z (mA)
Min
HZC2.0
1.90
2.20
5
120.0
0.5
100
5
30
HZC2.2
2.10
2.40
5
120.0
0.7
100
5
30
HZC2.4
2.30
2.60
5
120.0
1.0
100
5
30
HZC2.7
2.50
2.90
5
120.0
1.0
110
5
30
HZC3.0
2.80
3.20
5
50.0
1.0
120
5
30
HZC3.3
3.10
3.50
5
20.0
1.0
130
5
30
HZC3.6
3.40
3.80
5
10.0
1.0
130
5
30
HZC3.9
3.70
4.10
5
10.0
1.0
130
5
30
HZC4.3
4.01
4.48
5
10.0
1.0
130
5
30
HZC4.7
4.42
4.90
5
10.0
1.0
130
5
30
HZC5.1
4.84
5.37
5
5.0
1.5
130
5
30
HZC5.6
5.31
5.92
5
5.0
2.5
80
5
30
HZC6.2
5.86
6.53
5
2.0
3.0
50
5
30
HZC6.8
6.47
7.14
5
1.0
3.5
30
5
30
HZC7.5
7.06
7.84
5
1.0
4.0
30
5
30
HZC8.2
7.76
8.64
5
0.5
5.0
30
5
30
HZC9.1
8.56
9.55
5
0.5
6.0
30
5
30
HZC10
9.45
10.55
5
0.5
7.0
30
5
30
HZC11
10.44
11.56
5
0.5
8.0
30
5
30
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330
Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec


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