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HAL575 Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers |
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HAL575 Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers |
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5 / 20 page  HAL57x, HAL58x ADVANCE INFORMATION 5 Micronas 2. Functional Description The HAL 57x, HAL 58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bounc- ing. Magnetic offset caused by mechanical stress is com- pensated for by using the “switching offset compensa- tion technique”. An internal oscillator provides a two- phase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall volt- ages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current con- sumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to –15 V. No external protection diode is needed for reverse voltages ranging from 0 V to –15 V. Fig. 2–1: HAL 57x, HAL 58x block diagram Temperature Dependent Bias Switch Hysteresis Control Comparator Current Source VDD 1 Clock Hall Plate GND 2, 3 HAL 57x, HAL58x Reverse Voltage & Overvoltage Protection t IDDlow IDD 1/fosc = 6.9 µs IDDhigh B BOFF fosc t t t IDD t BON Fig. 2–2: Timing diagram (example: HAL 581) |
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