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HAL573 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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HAL573 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
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3 / 20 page  HAL57x, HAL58x ADVANCE INFORMATION 3 Micronas Two-Wire Hall Effect Sensor Family in CMOS technology 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the ex- ternal magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). According- ly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant mag- netic characteristics in the full supply voltage and tem- perature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 V to 24 V in the junction temperature range from –40 °C up to 140 °C. All sensors are available in the SMD-pack- age SOT-89B and in the leaded version TO-92UA. 1.1. Features: – current output for two-wire applications – low current consumption: 5 mA ... 6.9 mA – high current consumption: 12 mA ... 17 mA – junction temperature range from –40 °C up to 140 °C. – operates from 3.75 V to 24 V supply voltage – operates with static magnetic fields and dynamic mag- netic fields up to 10 kHz – switching offset compensation at typically 145 kHz – overvoltage and reverse-voltage protection – magnetic characteristics are robust against mechani- cal stress effects – constant magnetic switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to DIN 40839 1.2. Family Overview Type Switching Behavior Sensitivity see Page 571 unipolar medium 12 573 unipolar low 13 574 unipolar medium 14 575 latching medium 15 581 unipolar inverted medium 16 584 unipolar inverted medium 17 Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. BHYS Current consumption 0BON BOFF IDDlow B Fig. 1–1: Unipolar Switching Sensor IDDhigh Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. BHYS 0BOFF BON B Fig. 1–2: Unipolar Inverted Switching Sensor IDDhigh IDDlow Current consumption |
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