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PTPS1H000AQDGNRQ1 Datasheet(PDF) 5 Page - Texas Instruments |
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PTPS1H000AQDGNRQ1 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 27 page 5 TPS1H000-Q1 www.ti.com SLVSDO6 – AUGUST 2017 Product Folder Links: TPS1H000-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TPS1H000-Q1 UNIT DGN (HVSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 54 °C/W RθJC(top) Junction-to-case (top) thermal resistance 44.9 °C/W RθJB Junction-to-board thermal resistance 34.6 °C/W ψJT Junction-to-top characterization parameter 2.1 °C/W ψJB Junction-to-board characterization parameter 34.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 7.6 °C/W (1) Value specified by design, not subject to production test 6.5 Electrical Characteristics over operating ambient temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OPERATING VOLTAGE VVS(nom) Nominal operating voltage 4 40 V VVS(uvr) Undervoltage restart VVS rising 3.5 3.7 4 V VVS(uvf) Undervoltage shutdown VVS falling 3 3.2 3.4 V V(uv,hys) Undervoltage shutdown, hysteresis 0.5 V OPERATING CURRENT I(op) Nominal operating current VVS = 13.5 V, VIN = 5 V, VDIAG_EN = 0 V, IOUT = 0.1 A, ICL = 0.5 A. 5 mA I(off) Standby current VVS = 13.5 V, VIN = VDIAG_EN = VCL = VOUT = 0 V, TJ = 25 °C 0.5 µA VVS = 13.5 V, VIN = VDIAG_EN = VCL = VOUT = 0 V, TJ = 125 °C 3 I(off,diag) Standby current with diagnostics enabled VVS = 13.5 V, VIN = 0 V, VDIAG_EN = 5 V 3 mA t(off,deg) Standby-mode deglitch time(1) IN from high to low, if deglitch time ≥ t(off,deg), the device enters into standby mode. 12.5 ms Ilkg(out) Output leakage current in off-state VVS = 13.5 V, VIN = VDIAG_EN = VOUT = 0 V 3 µA POWER STAGE rDS(on) On-state resistance VVS ≥ 3.5 V, TJ = 25°C 1000 mΩ VVS ≥ 3.5 V, TJ = 150°C 2000 ICL(int) Internal current limit CL pin connected to GND 1 1.8 A ICL(TSD) Current-limit value percentage during thermal shutdown 60% VDS(clamp) Drain −to−source voltage internally clamped 45 65 V OUTPUT DIODE CHARACTERISTICS VF Drain −to-source diode voltage IN = 0, IOUT = −0.15 A 0.3 0.7 1 V IR(1) Continuous reverse current from source to drain during a short-to- battery condition(1) t < 60 s, VIN= 0 V, TJ = 25°C. 1 A IR(2) Continuous reverse current from source to drain during a reverse- polarity condition(1) t < 60 s, VIN= 0 V, TJ = 25°C. GND pin 1-kΩ resistor in parallel with diode. 1 A LOGIC INPUT (IN, DIAG_EN) VIH Logic high-level voltage 2 V |
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