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TPS1H000-Q1

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SLVSDO6 – AUGUST 2017

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

TPS1H000-Q1

UNIT

DGN (HVSSOP)

8 PINS

Junction-to-ambient thermal resistance

54

°C/W

Junction-to-case (top) thermal resistance

44.9

°C/W

Junction-to-board thermal resistance

34.6

°C/W

Junction-to-top characterization parameter

2.1

°C/W

Junction-to-board characterization parameter

34.5

°C/W

Junction-to-case (bottom) thermal resistance

7.6

°C/W

(1)

Value specified by design, not subject to production test

6.5 Electrical Characteristics

over operating ambient temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OPERATING VOLTAGE

Nominal operating voltage

4

40

V

Undervoltage restart

3.5

3.7

4

V

Undervoltage shutdown

3

3.2

3.4

V

Undervoltage shutdown, hysteresis

0.5

V

OPERATING CURRENT

Nominal operating current

5

mA

Standby current

0.5

µA

3

Standby current with diagnostics

enabled

5 V

3

mA

IN from high to low, if deglitch time

≥

standby mode.

12.5

ms

Output leakage current in off-state

= 0 V

3

µA

POWER STAGE

On-state resistance

1000

mΩ

2000

Internal current limit

CL pin connected to GND

1

1.8

A

Current-limit value percentage during

thermal shutdown

60%

Drain

−to−source voltage internally

clamped

45

65

V

OUTPUT DIODE CHARACTERISTICS

Drain

−to-source diode voltage

0.3

0.7

1

V

Continuous reverse current from

source to drain during a short-to-

1

A

Continuous reverse current from

source to drain during a reverse-

pin 1-kΩ resistor in parallel with

diode.

1

A

LOGIC INPUT (IN, DIAG_EN)

Logic high-level voltage

2

V