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FQB16N25CTM Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQB16N25CTM Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB16N25C/FQI16N25C Rev. A1 June 2006 QFET ® FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features • 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V • Low gate charge ( typical 41nC) • Low Crss ( typical 68pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. Absolute Maximum Ratings Thermal Characteristics D2-PAK FQB Series GS D D G S I2-PAK FQI Series GS D Symbol Parameter FQB16N25C / FQI16N25C Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 15.6 A - Continuous (TC = 100°C) 9.8 A IDM Drain Current - Pulsed (Note 1) 62.4 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 410 mJ IAR Avalanche Current (Note 1) 15.6 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C)* 3.13 W Power Dissipation (TC = 25°C) - Derate above 25°C 139 W 1.11 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQB16N25C / FQI16N25C Units RθJC Thermal Resistance, Junction-to-Case 0.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient* 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) |
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