CY62128DV30
MoBL
Document #: 38-05231 Rev. *C
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ..........................................................
−0.3V to 3.9V
DC Voltage Applied to Outputs
in High-Z State[3] ....................................
−0.3V to V
CC + 0.3V
DC Input Voltage[3] ................................
−0.3V to V
CC + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (TA)VCC
[4]
Industrial
−40°C to +85°C
2.2V to 3.6V
Product Portfolio
Product
VCC Range (V)
Speed
(ns)
Power Dissipation
Operating, Icc (mA)
Standby, ISB2 (µA)
f = 1 MHz
f = fMAX
Min.
Typ.
Max.
Typ.[5]
Max.
Typ.[5]
Max.
Typ.[5]
Max.
CY62128DV30L
2.2
3.0
3.6
55/70
0.85
1.5
5
10
1.5
5
CY62128DV30LL
55/70
0.85
1.5
5
10
1.5
4
DC Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
CY62128DV30-55/70
Unit
Min.
Typ.[5]
Max.
VOH
Output HIGH Voltage
2.2 < VCC < 2.7
IOH = −0.1 mA
2.0
V
2.7 < VCC < 3.6
IOH = −1.0 mA
2.4
VOL
Output LOW Voltage
2.2 < VCC < 2.7
IOL = 0.1 mA
0.4
V
2.7 < VCC < 3.6
IOL = 2.1 mA
0.4
VIH
Input HIGH Voltage
2.2 < VCC < 2.7
1.8
VCC + 0.3
V
2.7 < VCC < 3.6
2.2
VCC + 0.3
VIL
Input LOW Voltage
2.2 < VCC < 2.7
−0.3
0.6
V
2.7 < VCC < 3.6
−0.3
0.8
IIX
Input Leakage Current
GND < VI < VCC
−1+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
−1+1
µA
ICC
VCC Operating Supply Cur-
rent
f = fMAX = 1/tRC
Vcc = 3.6V,
IOUT = 0mA,
CMOS level
510
mA
f = 1 MHz
0.85
1.5
ISB1
Automatic CE Power-down
Current
− CMOS Inputs
CE1 > VCC − 0.2V, CE2 < 0.2V,
VIN > VCC − 0.2V, VIN < 0.2V,
f = fMAX (Address and Data Only),
f = 0 (OE, WE,)
L1.5
5
µA
LL
1.5
4
ISB2
Automatic CE Power-down
Current
− CMOS Inputs
CE1 > VCC − 0.2V, CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V,
f = 0, VCC=3.6V
L1.5
5
µA
LL
1.5
4
Capacitance[6]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
8pF
COUT
Output Capacitance
8
pF
Notes:
3.
VIL(min.) = −2.0V for pulse durations less than 20 ns., VIH(max.) = Vcc+0.75V for pulse durations less than 20 ns.
4.
Full device operation requires linear ramp of Vcc from 0V to Vcc(min) and Vcc must be stable at Vcc(min) for 500
µ s.
5.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
6.
Tested initially and after any design or proces changes that may affect these parameters.