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CY62128DV30L-70ZI Datasheet(PDF) 1 Page - Cypress Semiconductor

Part # CY62128DV30L-70ZI
Description  1 Mb (128K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62128DV30L-70ZI Datasheet(HTML) 1 Page - Cypress Semiconductor

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1 Mb (128K x 8) Static RAM
CY62128DV30
MoBL
Cypress Semiconductor Corporation
3901 North First Street
San Jose
, CA 95134
408-943-2600
Document #: 38-05231 Rev. *C
Revised August 29, 2003
Features
• Very high speed: 55 and 70 ns
• Wide voltage range: 2.2V to 3.6V
• Pin compatible with CY62128V
• Ultra-low active power
— Typical active current: 0.85 mA @ f = 1 MHz
— Typical active current: 5 mA @ f = fMAX
• Ultra-low standby power
• Easy memory expansion with CE1, CE2, and OE
features
• Automatic power-down when deselected
• Packages offered in a 32-lead SOIC, a 32-lead TSOP, a
32-lead Short TSOP, and a 32-lead Reverse TSOP
Functional Description[1]
The CY62128DV30 is a high-performance CMOS static RAM
organized as 128K words by 8 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life
 (MoBL®) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
power consumption by 90% when addresses are not toggling.
The device can be put into standby mode reducing power con-
sumption by more than 99% when deselected Chip Enable 1
(CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output
pins (I/O0 through I/O7) are placed in a high-impedance state
when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable
2 (CE2) LOW, outputs are disabled (OE HIGH), or during a
write operation (Chip Enable 1 (CE1) LOW and Chip Enable 2
(CE2) HIGH and Write Enable (WE) LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE1) LOW with Chip Enable 2 (CE2) HIGH and Write En-
able(WE) LOW. Data on the eight I/O pins is then written into
the location specified on the Address pin (A0 thro. A16).
Reading from the device is accomplished by taking Chip En-
able 1 (CE1) LOW with Chip Enable 2 (CE2) HIGH and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/Oo through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH) or
during a write operation (CE1 LOW, CE2 HIGH), and WE
LOW).
Note:
1.
For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
A 1
A 2
A 3
A4
A 5
A
6
A
7
A 8
COLUMN
DECODER
Data in Drivers
Power-
down
WE
OE
I/O0
I/O1
I/O2
I/O3
128K x 8
ARRAY
I/O7
I/O6
I/O5
I/O4
A 0
A
9
A10
A11
CE1
CE2


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