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SR160 Datasheet(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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SR160 Datasheet(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
1 / 2 page Characteristic Symbol SR120 SR130 SR140 SR150 SR160 SR180 SR1100 SR1150 SR1200 Unit SR120 – SR1200 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C D Mechanical Data ! Case: DO-41, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1 of 2 SR120 – SR1200 0.55 0.70 0.85 0.92 V 1.0 A 14 21 28 35 42 56 70 105 140 V 20 30 40 50 60 80 100 150 200 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 75°C IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 20 mA Typical Thermal Resistance (Note 1) RJL RJA 28 88 °C/W Operating Temperature Range Tj -65 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-41 Dim Min Max A 24.5 — B 4.06 5.21 C 0.60 0.80 D 2.00 3.00 All Dimensions in mm Alldatasheet |
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