BF244A

BF244B

BF244C

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications

operating up to 450 MHz, and for analog switching requiring low

capacitance. Sourced from Process 50.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

BF244A / BF244B / BF244C

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

357

°C/W

Symbol

Parameter

Value

Units

Drain-Gate Voltage

30

V

Gate-Source Voltage

- 30

V

Drain Current

50

mA

Forward Gate Current

10

mA

Storage Temperature Range

-55 to +150

°C

S

G

D

TO-92

1997 Fairchild Semiconductor Corporation