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SSQ109N12SG Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part No. SSQ109N12SG
Description  N-Ch Enhancement Mode Power MOSFET
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Maker  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
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SSQ109N12SG Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

   
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Elektronische Bauelemente
SSQ109 12SG
109A, 120V, RDS(O ) 10m
-Ch Enhancement Mode Power MOSFET
29-Jun-2017 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
TO-220
109N12SG
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSQ109N12SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSQ109N12SG meet the RoHS and Green Product with
Function reliability approved.
FEATURES
RDS(on)≦10m
@VGS=10V
High speed power switching
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-220 Package
MARKING
ABSOLUTE MAXIMUM RATINGS (T
J=25
°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
120
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
109
Continuous Drain Current (Silicon Limited)
TC=100°C
ID
77
A
Pulsed Drain Current
IDM
300
A
Avalanche Energy, Single Pulse, @L=0.4mH
TC=25°C
EAS
320
mJ
Power Dissipation
TC=25°C
PD
214
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 175
°C
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
0.7
°C / W
1
Gate
3
Source
2
Drain
Date Code
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
9.96
10.36
H
2.54 BSC.
B
14.7
16
I
2.04
2.92
C
2.74 BSC.
J
3.745 REF.
D
12.7
14.73
K
0.356
0.5
E
1.15
1.82
L
5.85
6.85
F
0.39
1.01
M
0.51
1.39
G
3.56
4.82


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