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SSQ63N60SG Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part No. SSQ63N60SG
Description  N-Ch Enhancement Mode Power MOSFET
Download  4 Pages
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Maker  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
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SSQ63N60SG Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

   
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Elektronische Bauelemente
SSQ63 60SG
63A, 60V, RDS(O ) 9m
-Ch Enhancement Mode Power MOSFET
29-Jun-2017 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
J=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Drain-Source Breakdown Voltage
BVDSS
60
-
-
V
VGS=0, ID=250µA
Gate Threshold Voltage
VGS(th)
1
1.8
2.4
V
VDS=VGS, ID=250µA
Forward Transfer conductance
gfs
-
26
-
S
VDS=5V, ID=20A
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±20V
TJ=25°C
-
-
1
Drain-Source Leakage Current
TJ=100°C
IDSS
-
-
100
µA
VDS=60V, VGS=0
-
7.3
9
VGS=10V, ID=20A
Static Drain-Source On-Resistance
RDS(ON)
-
10
13
m
VGS=4.5V, ID=20A
-
24
-
VGS=10V
Total Gate Charge
Qg
-
12
-
VGS=4.5V
Gate-Source Charge
Qgs
-
5
-
Gate-Drain (“Miller”) Change
Qgd
-
3
-
nC
ID=20A
VDD=30V
VGS=10V
Turn-on Delay Time
Td(on)
-
9
-
Rise Time
Tr
-
4
-
Turn-off Delay Time
Td(off)
-
29
-
Fall Time
Tf
-
4
-
nS
VDD=30V
ID=20A
VGS=10V
RG=10
Input Capacitance
Ciss
-
1620
-
Output Capacitance
Coss
-
415
-
Reverse Transfer Capacitance
Crss
-
3
-
pF
VGS=0
VDS=30V
f=1.0MHz
Source-Drain Diode
Forward On Voltage
VSD
-
0.9
1.2
V
IF=20A, VGS=0
Reverse Recovery Time
Trr
-
30
-
nS
Reverse Recovery Charge
Qrr
-
43
-
nC
VR=30V, IF=20A, dl/dt=300A/µs


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