SSQ63N60SG datasheet(1/4 Pages) SECOS

Part #	SSQ63N60SG

Description	N-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSQ63 60SG

63A, 60V, RDS(O ) 9m

-Ch Enhancement Mode Power MOSFET

29-Jun-2017 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

TO-220

63N60SG

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSQ63N60SG is the highest performance trench

N-ch MOSFETs with extreme high cell density , which

provide excellent RDS(ON) and gate charge for most of the

synchronous buck converter applications.

The SSQ63N60SG meet the RoHS and Green Product with

Function reliability approved.

FEATURES

RDS(on)≦9m

@VGS=10V

RDS(on)≦13m

@VGS=4.5V

High speed power switching, Logic Level

Enhanced Body diode dv/dt capability

Enhanced Avalanche Ruggedness

100% UIS Tested, 100% Rg Tested

TO-220 Package

MARKING

ABSOLUTE MAXIMUM RATINGS (T

J=25

°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

TC=25°C

63

Continuous Drain Current (Silicon Limited)

TC=100°C

45

Continuous Drain Current (Package Limited)

TC=25°C

ID

60

A

Pulsed Drain Current

IDM

270

A

Avalanche Energy, Single Pulse, @L=0.4mH

TC=25°C

EAS

20

mJ

Power Dissipation

TC=25°C

PD

79

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 ~ 175

°C

Thermal Resistance Ratings

Maximum Thermal Resistance Junction-Ambient

RθJA

65

Maximum Thermal Resistance Junction-Case

RθJC

1.9

°C / W

1

Gate

3

Source

2

Drain

Date Code

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

9.96

10.36

H

2.54 BSC.

B

14.7

16

I

2.04

2.92

C

2.74 BSC.

J

3.745 REF.

D

12.7

14.73

K

0.356

0.5

E

1.15

1.82

L

5.85

6.85

F

0.39

1.01

M

0.51

1.39

G

3.56

4.82

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