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SSQ63N60SG Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSQ63N60SG Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente SSQ63 60SG 63A, 60V, RDS(O ) 9m -Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-220 63N60SG RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSQ63N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ63N60SG meet the RoHS and Green Product with Function reliability approved. FEATURES RDS(on)≦9m @VGS=10V RDS(on)≦13m @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING ABSOLUTE MAXIMUM RATINGS (T J=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC=25°C 63 Continuous Drain Current (Silicon Limited) TC=100°C 45 Continuous Drain Current (Package Limited) TC=25°C ID 60 A Pulsed Drain Current IDM 270 A Avalanche Energy, Single Pulse, @L=0.4mH TC=25°C EAS 20 mJ Power Dissipation TC=25°C PD 79 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient RθJA 65 Maximum Thermal Resistance Junction-Case RθJC 1.9 °C / W 1 Gate 3 Source 2 Drain Date Code Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 9.96 10.36 H 2.54 BSC. B 14.7 16 I 2.04 2.92 C 2.74 BSC. J 3.745 REF. D 12.7 14.73 K 0.356 0.5 E 1.15 1.82 L 5.85 6.85 F 0.39 1.01 M 0.51 1.39 G 3.56 4.82 |
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