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26MB140 Datasheet(PDF) 2 Page - International Rectifier

Part No. 26MB140
Description  SINGLE PHASE BRIDGE Power Modules
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

26MB140 Datasheet(HTML) 2 Page - International Rectifier

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MB High Voltage Series
2
Bulletin I27177 03/03
www.irf.com
T
J
Junction temperature range
- 55 to 150 oC
Tstg
Storage temperature range
- 55 to 150 oC
RthJC Max. thermal resistance junction to case
1.7
1.35
K/W
Per bridge
RthCS Max. thermal resistance, case to heatsink
0.2
K/W
Mounting surface , smooth, flat and greased
wt
Approximate weight
20
g
T
Mounting Torque
± 10%
2.0
Nm
Bridge to heatsink
Thermal and Mechanical Specifications
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
max.
VV
mA
26MB..A
140
1400
1500
2
36MB..A
160
1600
1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
26MB-A
36MB-A Units Conditions
I
O
Maximum DC output current
25
35
A
Resistive or inductive load
20
28
A
Capacitive load
@ Case temperature
65
60
°C
I
FSM
Maximum peak, one-cycle
400
475
A
t = 10ms
No voltage
non-repetitive forward current
420
500
t = 8.3ms
reapplied
335
400
t = 10ms
100% V
RRM
350
420
t = 8.3ms
reapplied
Initial T
J
= T
J
max.
I2t
Maximum I2t for fusing
790
1130
A2s
t = 10ms
No voltage
725
1030
t = 8.3ms
reapplied
560
800
t = 10ms
100% V
RRM
512
730
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
5.6
11.3
KA2
√sI2t for time t
x
= I2
√t x √t
x
;
0.1
≤ t
x
10ms, V
RRM
= 0V
V
F(TO)1
Low-level of threshold voltage
0.70
0.74
V
(16.7% x
πxI
F(AV)
< I <
πxI
F(AV)
), @ T
J
max.
V
F(TO)2
High-level of threshold voltage
0.75
0.79
(I >
π x I
F(AV)), @ TJ max.
r
t1
Low-level forward slope resistance
7.0
5.5
m
(16.7% x
πxI
F(AV)
< I <
πxI
F(AV)
), @ T
J
max.
r
t2
High-level forward slope resistance
6.4
5.2
(I >
π x I
F(AV)), @ TJ max.
V
FM
Maximum forward voltage drop
1.25
1.3
V
T
J
= 25 oC, I
FM
= 40A
PK
(26MB)
T
J
= 25 oC, I
FM
= 55A
PK
(36MB)
I
RRM
Max. DC reverse current
10
10
µAT
J
= 25 oC, per diode at V
RRM
VINS
RMS isolation voltage base plate
2700
2700
V
f = 50 Hz, t = 1s
Forward Conduction
Parameters
26MB-A
36MB-A
Units Conditions
tp = 400
µs


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