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SI4565DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4565DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page Si4565DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 73224 S-50033—Rev. A, 17-Jan-05 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 0.6 1.6 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA P-Ch −0.8 −2.2 V VDS Temperature Coefficient DVDS/Tj N-Ch 40 VDS Temperature Coefficient DVDS/Tj ID = 250 mA P-Ch −40 mV/_C VGS(th) Temperature Coefficient DVGS(th)/Tj ID = 250 mA N-Ch −3.8 mV/_C VGS(th) Temperature Coefficient DVGS(th)/Tj P-Ch 3.4 Gate Body Leakage IGSS VDS = 0 V, VGS = "12 V N-Ch "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "16 V P-Ch "100 nA VDS = 40 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = −40 V, VGS = 0 V P-Ch −1 mA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 55_C N-Ch 10 mA VDS = −40 V, VGS = 0 V, TJ = 55_C P-Ch −10 On State Drain Currenta ID( ) VDS w 5 V, VGS = 10 V N-Ch 20 A On-State Drain Currenta ID(on) VDS p −5 V, VGS = −10 V P-Ch −20 A VGS = 10 V, ID = 5.2 A N-Ch 0.033 0.040 Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −4.5 A P-Ch 0.045 0.054 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 4.9 A N-Ch 0.037 0.045 W VGS = −4.5 V, ID = −3.9 A P-Ch 0.059 0.072 Forward Transconductancea gf VDS = 15 V, ID = 5.2 A N-Ch 18 S Forward Transconductancea gfs VDS = −15 V, ID = −4.5 A P-Ch 13 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V N-Ch 0.75 1.2 V Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V P-Ch −0.79 −1.2 V Dynamicb Input Capacitance Ciss N-Channel N-Ch 700 Input Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Ch 805 Output Capacitance C VDS = 20 V, VGS = 0 V, f = 1 MHz P Channel N-Ch 76 pF Output Capacitance Coss P-Channel VDS = −20 V VGS = 0 V f = 1 MHz P-Ch 120 pF Reverse Transfer Capacitance C VDS = −20 V, VGS = 0 V, f = 1 MHz N-Ch 45 Reverse Transfer Capacitance Crss P-Ch 85 Total Gate Charge Qg N-Channel N-Ch 8 12 Total Gate Charge Qg N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5.2 A P-Ch 9 14 Gate Source Charge Q VDS = 20 V, VGS = 4.5 V, ID = 5.2 A P Channel N-Ch 1.5 nC Gate-Source Charge Qgs P-Channel VDS = −20 V VGS = −45 V ID = −45 A P-Ch 2 nC Gate Drain Charge Q d VDS = −20 V, VGS = −4.5 V, ID = −4.5 A N-Ch 2.4 Gate-Drain Charge Qgd P-Ch 3.6 Gate Resistance R N-Ch 0.9 1.9 2.9 W Gate Resistance Rg P-Ch 5 11.5 18 W Turn On Delay Time td( ) N-Ch 7 11 Turn-On Delay Time td(on) N-Channel P-Ch 8 13 Rise Time t N-Channel VDD = 15 V, RL = 15 W I 1 A V 10 V R 6 W N-Ch 11 17 Rise Time tr VDD 15 V, RL 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Ch 12 18 ns Turn Off Delay Time td( ff) g P-Channel N-Ch 27 40 ns Turn-Off Delay Time td(off) P-Channel VDD = −15 V, RL = 15 W I 1 A V 10 V R 6 W P-Ch 74 110 Fall Time tf DD , L ID ^ −1 A, VGEN = −10 V, Rg = 6 W N-Ch 8 13 Fall Time tf P-Ch 38 60 Source-Drain t IF = 1.7 A, di/dt = 100 A/ms N-Ch 25 40 ns Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms P-Ch 27 45 ns Body Diode Q IF = 1.7 A, di/dt = 100 A/ms N-Ch 17 26 nC Body Diode Reverse Recovery Charge Qrr IF = −1.7 A, di/dt = 100 A/ms P-Ch 17 26 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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