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73224 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. 73224
Description  N- and P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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73224 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si4565DY
Vishay Siliconix
New Product
www.vishay.com
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Document Number: 73224
S-50033—Rev. A, 17-Jan-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
0.6
1.6
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
P-Ch
−0.8
−2.2
V
VDS Temperature Coefficient
DVDS/Tj
N-Ch
40
VDS Temperature Coefficient
DVDS/Tj
ID = 250 mA
P-Ch
−40
mV/_C
VGS(th) Temperature Coefficient
DVGS(th)/Tj
ID = 250 mA
N-Ch
−3.8
mV/_C
VGS(th) Temperature Coefficient
DVGS(th)/Tj
P-Ch
3.4
Gate Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "16 V
P-Ch
"100
nA
VDS = 40 V, VGS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V
P-Ch
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V, TJ = 55_C
N-Ch
10
mA
VDS = −40 V, VGS = 0 V, TJ = 55_C
P-Ch
−10
On State Drain Currenta
ID( )
VDS w 5 V, VGS = 10 V
N-Ch
20
A
On-State Drain Currenta
ID(on)
VDS p −5 V, VGS = −10 V
P-Ch
−20
A
VGS = 10 V, ID = 5.2 A
N-Ch
0.033
0.040
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −4.5 A
P-Ch
0.045
0.054
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 4.9 A
N-Ch
0.037
0.045
W
VGS = −4.5 V, ID = −3.9 A
P-Ch
0.059
0.072
Forward Transconductancea
gf
VDS = 15 V, ID = 5.2 A
N-Ch
18
S
Forward Transconductancea
gfs
VDS = −15 V, ID = −4.5 A
P-Ch
13
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
N-Ch
0.75
1.2
V
Diode Forward Voltagea
VSD
IS = −1.7 A, VGS = 0 V
P-Ch
−0.79
−1.2
V
Dynamicb
Input Capacitance
Ciss
N-Channel
N-Ch
700
Input Capacitance
Ciss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Ch
805
Output Capacitance
C
VDS = 20 V, VGS = 0 V, f = 1 MHz
P Channel
N-Ch
76
pF
Output Capacitance
Coss
P-Channel
VDS = −20 V VGS = 0 V f = 1 MHz
P-Ch
120
pF
Reverse Transfer Capacitance
C
VDS = −20 V, VGS = 0 V, f = 1 MHz
N-Ch
45
Reverse Transfer Capacitance
Crss
P-Ch
85
Total Gate Charge
Qg
N-Channel
N-Ch
8
12
Total Gate Charge
Qg
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
P-Ch
9
14
Gate Source Charge
Q
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
P Channel
N-Ch
1.5
nC
Gate-Source Charge
Qgs
P-Channel
VDS = −20 V VGS = −45 V ID = −45 A
P-Ch
2
nC
Gate Drain Charge
Q d
VDS = −20 V, VGS = −4.5 V, ID = −4.5 A
N-Ch
2.4
Gate-Drain Charge
Qgd
P-Ch
3.6
Gate Resistance
R
N-Ch
0.9
1.9
2.9
W
Gate Resistance
Rg
P-Ch
5
11.5
18
W
Turn On Delay Time
td( )
N-Ch
7
11
Turn-On Delay Time
td(on)
N-Channel
P-Ch
8
13
Rise Time
t
N-Channel
VDD = 15 V, RL = 15 W
I
1 A V
10 V R
6 W
N-Ch
11
17
Rise Time
tr
VDD 15 V, RL 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
P-Ch
12
18
ns
Turn Off Delay Time
td( ff)
g
P-Channel
N-Ch
27
40
ns
Turn-Off Delay Time
td(off)
P-Channel
VDD = −15 V, RL = 15 W
I
1 A V
10 V R
6 W
P-Ch
74
110
Fall Time
tf
DD
, L
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
N-Ch
8
13
Fall Time
tf
P-Ch
38
60
Source-Drain
t
IF = 1.7 A, di/dt = 100 A/ms
N-Ch
25
40
ns
Source-Drain
Reverse Recovery Time
trr
IF = −1.7 A, di/dt = 100 A/ms
P-Ch
27
45
ns
Body Diode
Q
IF = 1.7 A, di/dt = 100 A/ms
N-Ch
17
26
nC
Body Diode
Reverse Recovery Charge
Qrr
IF = −1.7 A, di/dt = 100 A/ms
P-Ch
17
26
nC
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.


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