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73224 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. 73224
Description  N- and P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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73224 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D UIS Tested
APPLICATIONS
D CCFL Inverter
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
N-Channel
40
0.040 @ VGS = 10 V
5.2
8
N-Channel
40
0.045 @ VGS = 4.5 V
4.9
8
P Channel
40
0.054 @ VGS = −10 V
−4.5
9
P-Channel
−40
0.072 @ VGS = −4.5 V
−3.9
9
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
S2
G2
D2
P-Channel MOSFET
N-Channel MOSFET
G1
D1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
40
−40
V
Gate-Source Voltage
VGS
"12
"16
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
5.2
3.9
−4.5
−3.3
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
4.2
3.1
−3.6
−2.7
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)a
IS
1.7
0.9
−1.7
−0.9
A
Avalanche Current
L = 0 1 mH
IAS
13
16
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
8.5
13
mJ
Maximum Power Dissipatioa
TA = 25_C
PD
2.0
1.1
2
1.1
W
Maximum Power Dissipatioa
TA = 70_C
PD
1.3
0.7
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction to Ambienta
t v 10 sec
R
52
62.5
50
62.5
Maximum Junction-to-Ambienta
Steady State
RthJA
90
110
85
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
32
40
30
40
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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