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SSQ04N60J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part No. SSQ04N60J
Description  N-Channel Enhancement Mode Power MOSFET
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Maker  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
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SSQ04N60J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

   
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Elektronische Bauelemente
SSQ04N60J
4 A, 600 V, RDS(ON) 3 Ω
N-Channel Enhancement Mode Power MOSFET
4-Nov-2015 Rev. A
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
600
-
-
V
VGS=0, ID=250µA
Drain-Source Diode Forward Voltage
2
VSD
-
-
1.5
V
VGS=0, IS=4A
Drain-Source Leakage Current
IDSS
-
-
25
µA
VDS=600V, VGS=0
Gate-Source Leakage Forward Current
2
IGSSF
-
-
100
nA
VDS=0V, VGS=30V
Gate-Source Leakage Reverse Current
2
IGSSR
-
-
-100
nA
VDS=0V, VGS= -30V
On Characteristics
2
Gate Threshold Voltage
VGS(th)
2
-
4
V
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
-
2
3
VGS=10V, ID=2A
Forward Transconductance
gfs
2
2.6
-
S
VDS=50V, ID=2A
Dynamic Characteristics
Input Capacitance
Ciss
-
540
-
Output Capacitance
Coss
-
125
-
Reverse Transfer Capacitance
Crss
-
8
-
pF
VDS=25V
VGS=0
f=1MHz
Switching Characteristics
Total Gate Charge
Qg
-
5
-
Gate-Source Charge
Qgs
-
2.7
-
Gate-Drain (“Miller”) Change
Qgd
-
2
-
nC
VDS=480V
VGS=10V
ID=4A
Turn-on Delay Time
Td(on)
-
12
-
Rise Time
Tr
-
7
-
Turn-off Delay Time
Td(off)
-
19
-
Fall Time
Tf
-
10
-
nS
VDD=300V
VGS=10V
RG=9.1
ID=4A
Notes:
1.
EAS condition: L=30mH, IL=4A, VDD=100V, VGS=10V, RG=25 , Starting TJ=25°C.
2.
Pulse Test : Pulse width
300
µs, duty cycle
2%.


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