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SSQ04N60J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part No. SSQ04N60J
Description  N-Channel Enhancement Mode Power MOSFET
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Maker  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
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SSQ04N60J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

   
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Elektronische Bauelemente
SSQ04N60J
4 A, 600 V, RDS(ON) 3 Ω
N-Channel Enhancement Mode Power MOSFET
4-Nov-2015 Rev. A
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
TO-220J
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
control and bridge circuits.
FEATURES
High Current Rating
Low RDS(ON)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
ABSOLUTE MAXIMUM RATINGS (T
A=25°C unless otherwise noted)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
ID
4
A
Continuous Drain-Source Diode Forward Current
IS
4
A
Single Pulse Avalanche Energy
1
EAS
260
mJ
Maximum Lead Temperature for Soldering Purposes@1/8’’ from case
for 5 seconds
TL
260
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
62.5
°C/W
1
G
3
S
D
2
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
10.010
10.350
I
4.980
5.180
B
3.735
3.935
J
3.560
3.960
C
2.590
2.890
K
4.470
4.670
D
12.060
12.460
L
1.200
1.400
E
1.170
1.370
M
8.500
8.900
F
0.710
0.910
N
2.520
2.820
G
13.400
13.800
Q
0.330
0.650
H
2.540 TYP.


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