TSHF5410_11 datasheet(3/5 Pages) VISHAY

Part #	TSHF5410

Description	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

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Manufacturer	VISHAY [Vishay Siliconix]

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TSHF5410

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 24-Aug-11

3

Document Number: 81303

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Radiant Power vs. Forward Current

Fig. 7 - Relative Radiant Power vs. Wavelength

Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

100

1000

0.01

0.1

1

10

100

tp - Pulse Duration (ms)

16031

t

p/T = 0.01

0.05

0.2

0.5

0.1

0.02

T

amb < 50 °C

18873

1000

100

10

1

VF - Forward Voltage (V)

02

4

t

p = 100 µs

t

p/T = 0.001

13

0.1

1

10

100

1000

1

10

100

1000

18220

IF - Forward Current (mA)

0.1

1

10

100

1000

110

100

1000

16971

IF - Forward Current (mA)

800

900

λ - Wavelength (nm)

1000

20082

0

0.25

0.5

0.75

1.0

1.25

94 8883

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

0

0.2

0.4

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