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SSG2601 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG2601 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 7 page  Elektronische Bauelemente SSG2601 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.3 A, 20 V, RDS(ON) 25 mΩ Ω Ω Ω P-Ch: -5.3A, -20 V, RDS(ON) 75 mΩ Ω Ω Ω 10-Jun-2014 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2601SS = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG2601 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Performance MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS Ratings Parameter Symbol N-Ch P-Ch Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V TA=25°C 6.3 -5.3 A Continuous Drain Current 1, V GS@4.5V TA=70°C ID 4.9 -4 A Pulsed Drain Current 2 IDM 25 -23 A Total Power Dissipation 3 TA=25°C PD 1.5 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Data Thermal Resistance Junction-ambient 1 Max. RθJA 85 °C / W Thermal Resistance Junction-case 1 Max. RθJC 40 °C / W Package MPQ Leader Size SOP-8 3K 13 inch SOP-8 A H B M D C J K F L E N G Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G2 G1 S1 S2 D2 D2 D1 D1 |
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