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SSG07N10J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG07N10J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page Elektronische Bauelemente SSG07N10J 7A , 100V , RDS(ON) 28m N-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Q07N10 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSG07N10J is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. 100% EAS guaranteed with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 7 A Pulsed Drain Current IDM 28 A Single Pulse Avalanche Energy 1 EAS 16 mJ Total Power Dissipation PD 1.4 W Thermal Resistance from Junction to Ambient RθJA 89 °C/ W Lead Temperature for Soldering Purposes@1/8’’ form case for 10s TL 260 °C Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Notes: 1. EAS condition: VDD=25V,L=0.1mH,RG=25 ,Starting TJ=25°C. Date Code G S S S D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.700 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. SOP-8 |
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