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SSG05N10J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG05N10J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente SSG05N10J 5A , 100V , RDS(ON) 140m Dual-N Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP-8 Q05N10 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSG05N10J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. This device is suitable for the use in a wide variety of applications. FEATURES Special processing technology for high ESD capability High density cell design for ultra low RDS(on) Good stability and uniformity with high EAS Excellent package for good heat dissipation APPLICATIONS Power switching application Hard switching and high frequency circuits Uninterruptible power supply MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 5 A Pulsed Drain Current 1 IDM 24 A Power Dissipation 1 PD 1.4 W Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Thermal Resistance Rating Thermal Resistance from Junction to Ambient 2 RθJA 89 °C/ W Date Code G S G S D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.700 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. |
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