Elektronische Bauelemente

SSF3134KW

Ω

Ω

Ω

N-Channel Enhancement Mode Power MOSFET

10-Jul-2017 Rev. D

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

20

-

-

V

Gate-Threshold Voltage

3

0.35

-

1.1

V

Gate-Source Leakage Current

-

-

±20

µA

Drain-Source Leakage Current

-

-

1

µA

Forward Transconductance

1

-

-

S

-

-

380

-

-

450

Static Drain-Source On-Resistance

3

-

-

800

m

Switching Characteristics

Input Capacitance

-

120

-

Output Capacitance

-

20

-

Reverse Transfer Capacitance

-

15

-

pF

f=1MHz

Total Gate Charge

-

0.88

-

Gate-Source Charge

-

0.14

-

Gate-Drain Charge

-

0.29

-

nC

Turn-on Delay Time

-

6.7

-

Rise Time

-

4.8

-

Turn-off Delay Time

-

17.3

-

Fall Time

-

7.4

-

nS

Drain-Source Diode Characteristics

Diode Forward Voltage

3

-

-

1.2

V

Notes:

1.

Repetitive Rating: Pulse width is limited by the maximum junction temperature.

2.

3.

Pulse Test: Pulse width≤300µs, duty cycle≤0.5%.