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SSD40N10J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSD40N10J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page Elektronische Bauelemente SSD40N10J 40A, 100V, RDS(ON) 17 m N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID=250µA Drain-Source Leakage Current IDSS - - 1 µA VDS=100V, VGS=0 Gate-Source Leakage Current IGSS - - ±100 nA VDS=0V, VGS= ±20V On Characteristics 1 Gate-Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) - 14 17 m VGS=10V, ID=28A Forward Transconductance gfs 32 - - S VDS=25V, ID=28A Dynamic Characteristics Input Capacitance Ciss - 3400 - Output Capacitance Coss - 290 - Reverse Transfer Capacitance Crss - 221 - pF VDS=30V VGS=0 f=1MHz Switching Characteristics Total Gate Charge Qg - 94 - Gate-Source Charge Qgs - 16 - Gate-Drain (“Miller”) Change Qgd - 24 - nC VDS=30V VGS=10V ID=30A Turn-on Delay Time Td(on) - 15 - Rise Time Tr - 11 - Turn-off Delay Time Td(off) - 52 - Fall Time Tf - 13 - nS VDD=30V VGS=10V RG=2.5 RL=15 ID=2A Source-Drain Diode Characteristics Diode Forward Voltage 1 VSD - - 1.2 V IS=28A, VGS=0 Continuous Source Current IS - - 40 A Pulsed Source Current ISM - - 160 A Notes: 1. Pulse Test : Pulse width ≤300µs, duty cycle ≤2%. |
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