98822 datasheet(1/2 Pages) IXYS

Part #	98822

Description	High Voltage MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

750

mA

I

DM

T

C

= 25

°C, pulse width limited by T

JM

3A

I

AR

1.0

A

E

AR

T

C

= 25

°C5

mJ

E

AS

T

C

= 25

°C

100

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

3

V/ns

T

J

≤ 150°C, R

G = 47 Ω

P

D

T

C

= 25

°C40

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-252

0.8

g

TO-263

3

g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

High Voltage MOSFET

G = Gate,

D = Drain,

S = Source,

TAB = Drain

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

800

V

GS(th)

V

DS

= V

GS, ID = 25 µA

2.5

4.5

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J = 25°C25

µA

V

GS = 0 V

T

J = 125°C

500

µA

R

DS(on)

V

GS

= 10 V, I

D = 500 mA

9.5

11

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Features

! International standard packages

! High voltage, Low R

DS (on) HDMOS

TM

process

! Rugged polysilicon gate cell structure

! Fast switching times

Applications

! Switch-mode and resonant-mode

power supplies

! Flyback inverters

! DC choppers

! High frequency matching

Advantages

! Space savings

! High power density

DS98822C(11/03)

G D

S

TO-220AB (IXTP)

G

S

TO-263 AA (IXTA)

D (TAB)

N-Channel Enhancement Mode

Avalanche Energy Rated

IXTA 1N80

IXTP 1N80

IXTY 1N80

V

DSS

= 800

V

I

D25

= 750 mA

R

DS(on)

= 11

Ω

Preliminary Data

TO-252 AA (IXTY)

G

S

D (TAB)

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