SSD04N65J datasheet(2/3 Pages) SECOS

Part #	SSD04N65J

Description	N-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2 / 3 page

Elektronische Bauelemente

SSD04N65J

4A, 650V, RDS(ON) 3

N-Ch Enhancement Mode Power MOSFET

28-Dec-2015 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

650

-

V

VGS=0, ID=250µA

Drain-Source Diode Forward Voltage

2

VSD

-

1.5

V

VGS=0, IS=4A

Drain-Source Leakage Current

IDSS

-

25

µA

VDS=600V, VGS=0

Gate-Source Leakage Current

2

IGSS

-

±100

nA

VDS=0V, VGS=±30V

On Characteristics

2

Gate Threshold Voltage

VGS(th)

2

-

4

V

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON)

-

3

VGS=10V, ID=2A

Dynamic Characteristics

Input Capacitance

Ciss

-

760

-

Output Capacitance

Coss

-

180

-

Reverse Transfer Capacitance

Crss

-

20

-

pF

VDS=25V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Qg

-

5

-

Gate-Source Charge

Qgs

-

2.7

-

Gate-Drain (“Miller”) Change

Qgd

-

2

-

nC

VDS=480V

VGS=10V

ID=4A

Turn-on Delay Time

Td(on)

-

20

-

Rise Time

Tr

-

10

-

Turn-off Delay Time

Td(off)

-

40

-

Fall Time

Tf

-

20

-

nS

VDD=300V

VGS=10V

RG=9.1

ID=4A

Notes:

1.

EAS condition: L=30mH, IL=4A, VDD=100V, RG=25 , Starting TJ=25°C.

2.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.

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