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SSD04N65J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSD04N65J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page Elektronische Bauelemente SSD04N65J 4A, 650V, RDS(ON) 3 N-Ch Enhancement Mode Power MOSFET 28-Dec-2015 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition Off Characteristics Drain-Source Breakdown Voltage BVDSS 650 - - V VGS=0, ID=250µA Drain-Source Diode Forward Voltage 2 VSD - - 1.5 V VGS=0, IS=4A Drain-Source Leakage Current IDSS - - 25 µA VDS=600V, VGS=0 Gate-Source Leakage Current 2 IGSS - - ±100 nA VDS=0V, VGS=±30V On Characteristics 2 Gate Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) - - 3 VGS=10V, ID=2A Dynamic Characteristics Input Capacitance Ciss - 760 - Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 20 - pF VDS=25V VGS=0 f=1MHz Switching Characteristics Total Gate Charge Qg - 5 - Gate-Source Charge Qgs - 2.7 - Gate-Drain (“Miller”) Change Qgd - 2 - nC VDS=480V VGS=10V ID=4A Turn-on Delay Time Td(on) - 20 - Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 40 - Fall Time Tf - 20 - nS VDD=300V VGS=10V RG=9.1 ID=4A Notes: 1. EAS condition: L=30mH, IL=4A, VDD=100V, RG=25 , Starting TJ=25°C. 2. Pulse Test: Pulse width≦300µs, duty cycle≦2%. |
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