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SIK04N60SL Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SIK04N60SL Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 5 page Elektronische Bauelemente SIK04N60SL 4A , 600V , RDS(ON) 2.4 N-Ch Enhancement Mode Power MOSFET 17-Jul-2014 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 600 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±30V Drain-Source Leakage Current IDSS - - 1 µA VDS=600V, VGS=0 Static Drain-Source On-Resistance RDS(ON) - 2.0 2.4 VGS=10V, ID=2A Total Gate Charge 1.2 Qg - 8.16 - Gate-Source Charge 1.2 Qgs - 2.63 - Gate-Drain Change 1.2 Qgd - 3.01 - nC ID=4A VDS=480V VGS=10V Turn-on Delay Time 1.2 Td(on) - 16.8 - Rise Time 1.2 Tr - 26.2 - Turn-off Delay Time 1.2 Td(off) - 37.4 - Fall Time 1.2 Tf - 20.2 - nS VDD=300V ID=4A RG=25 Input Capacitance Ciss - 449.7 - Output Capacitance Coss - 57 - Reverse Transfer Capacitance Crss - 2 - pF VGS =0 VDS=25V f =1.0MHz Source-Drain Diode Diode Forward Voltage VSD - - 1.4 V IS=4A, VGS=0 Continuous Source Current IS - - 4 A Pulsed Source Current ISM - - 16 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time 1 Trr - 441.53 - ns Reverse Recovery Charge 1 Qrr - 1.98 - µC IS=4A,VGS=0, dlF/dt=100A/µS Notes: 1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2% 2. Essentially independent of operating temperature. |
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