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TT330N Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. TT330N
Description  Phase Control Thyristor Module
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Maker  ETC [List of Unclassifed Manufacturers]
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TT330N Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

   
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Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT 330 N 12...16
N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
Tvj = - 40°C...Tvj max
VDRM, VRRM
1200, 1400
V
repetitive peak forward off-state and reverse voltages
1600
V
Vorwärts-Stoßspitzensperrspannung
Tvj = - 40°C...Tvj max
VDSM
1200, 1400
V
non-repetitive peak forward off-state voltage
1600
V
Rückwärts-Stoßspitzensperrspannung
Tvj = + 25°C...Tvj max
VRSM
1300, 1500
V
non-repetitive peak reverse voltage
1700
V
Durchlaßstrom-Grenzeffektivwert
ITRMSM
520
A
RMS on-state current
Dauergrenzstrom
TC = 85°C
ITAVM
330
A
average on-state current
Stoßstrom-Grenzwert
Tvj = 25°C, tp = 10ms
ITSM
9100
A
surge current
Tvj = Tvj max, tp = 10ms
8000
A
Grenzlastintegral
Tvj = 25°C, tp = 10ms
I²t
414000
A²s
I²t-value
Tvj = Tvj max, tp = 10ms
320000
A²s
Kritische Stromsteilheit
DIN IEC 747-6
(diT/dt)cr
250
A/µs
critical rate of rise of on-state current
f = 50Hz, iGM = 1A, diG/dt = 1A/µs
Kritische Spannungssteilheit
Tvj = Tvj max, vD = 0,67 VDRM
(dvD/dt)cr
critical rate of rise of off-state voltage
6. Kennbuchstabe / 6th letter F
1000
V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
Tvj = Tvj max, iT = 800A
vT
max.
1,44
V
on-state voltage
Schleusenspannung
Tvj = Tvj max
V(TO)
0,8
V
threshold voltage
Ersatzwiderstand
Tvj = Tvj max
rT
0,6
m
slope resistance
Zündstrom
Tvj = 25°C, vD = 6V
IGT
max.
200
mA
gate trigger current
Zündspannung
Tvj = 25°C, vD = 6V
VGT
max.
2,0
V
gate trigger voltage
Nicht zündender Steuerstrom
Tvj = Tvj max, vD = 6V
IGD
max.
10
mA
gate non-trigger current
Tvj = Tvj max, vD = 0,5 VDRM
max.
5
mA
Nicht zündende Steuerspannung
Tvj = Tvj max, vD = 0,5 VDRM
VGD
max.
0,2
V
gate non-trigger voltage
Haltestrom
Tvj = 25°C, vD = 6V, RA = 5Ω
IH
max.
300
mA
holding current
Einraststrom
Tvj = 25°C, vD = 6V, RGK
≥ 10Ω
IL
max.
1200
mA
latching current
iGM = 1A, diG/dt = 1A/µs, tG = 20µs
Vorwärts- und Rückwärts-Sperrstrom
Tvj = Tvj max
iD, iR
max.
70
mA
forward off-state and reverse currents
vD = VDRM, vR = VRRM
Zündverzug
DIN IEC 747-6
tgd
max.
3,0
µs
gate controlled delay time
Tvj = 25°C, iGM = 1A, diG/dt = 1A/µs
Freiwerdezeit
Tvj = Tvj max, iTM = 350A
tq
circuit commutated turn-off time
vRM = 100V, VDM = 0,67 VDRM
dvD/dt = 20V/µs, -diT/dt = 10A/µs
5. Kennbuchstabe / 5th letter O
typ.
250
µs
Isolations-Prüfspannung
RMS, f = 50Hz, t = 1min
VISOL
3,0
kV
insulation test voltage
RMS, f = 50Hz, t = 1sec
3,6
kV
MOD-MA; R. Jörke
27. Nov 97
A 122/97
Seite/page 1(4)


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