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TS9414VB Datasheet(PDF) 2 Page - Vishay Siliconix |
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TS9414VB Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page TS9414VB www.vishay.com Vishay Semiconductors Rev. 1.1, 11-Apr-17 2 Document Number: 84275 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Relative Radiant Intensity vs. Wavelength Fig. 2 - Relative Radiant Intensity vs. Angular Displacement DIMENSIONS Fig. 3 - Sectional View BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF -1.45- V Radiant power (1) IF = 100 mA φe -40 - mW Reverse voltage IR = 5 μA VR 10 - - V Angle of half intensity IF = 100 mA ϕ -60 - deg Peak wavelength IF = 100 mA λp 925 940 955 nm Spectral bandwidth IF = 100 mA Δλ -50 - nm Rise time / fall time IF = 100 mA tr, tf -10 - ns 0 10 20 30 40 50 60 70 80 90 100 800 850 900 950 1000 1050 λ - Wavelength (nm) I F = 50 mA 0.4 0.2 0 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx - 0.355 - mm Length of chip edge (y-direction) Ly - 0.355 - mm Die height H - 0.17 - mm Diameter of bondpad d - 0.105 - mm 105 μm Bonding area (0.35) typ. 170 μm n-electrode p-electrode p-n junction |
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