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5KP12A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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5KP12A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente 5KP SERIES Voltage 5.0V ~ 250V 5000W Peak Power TVS 06-Jul-2015 Rev.A Page 1 of 4 A suffix of "-C" specifies halogen & RoHS compliant DESCRIPTION The 5KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. FEATURES VBR @TJ = VBR@25°C x (1+ αT x (TJ - 25)) (αT:Temperature Coefficient) Glass passivated chip junction in P600 package 5000W peak pulse capability at 10/1000µs waveform, repetition rate (duty cycles):0.01% Excellent clamping capability Typical failure mode is short from over-specified voltage or current Fast response time: typically less than 1.0ps from 0 Volts to BV min Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact) ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) Low incremental surge resistance Typical IR less than 2µA above 12V High temperature soldering guaranteed: 260°C/40 se conds / 0.375”, (9.5mm) lead length, 5 lbs., (2.3kg) tension Plastic package has underwriters laboratory flammability classification 94V-O Matte tin lead–free plated Halogen free and RoHS compliant 2nd level interconnect is Pb-free per IPC/JEDEC J-STD-609A.01 APPLICATIONS Functional Diagram TVS devices are ideal for the protection of I/O interfaces, VCC bus and other vulnerable circuits used in telecom, computer, industrial and consumer electronic applications. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power Dissipation by 10/1000µs Test Waveform 1 PPPM 5000 W Power Dissipation on infinite heatsink at TL=75°C P D 8.0 W Peak Forward Surge Current, 8.3ms single half sine-wave unidirectional only 2 IFSM 400 A Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only 3 VF 3.5/5.0 V Typical Thermal Resistance Junction to Lead RθJL 8.0 °C/W Typical Thermal Resistance Junction to Ambient RθJA 40 °C/W Operating and Storage Temperature Range TJ, TSTG -55 ~ 175 °C Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TA = 25°C per Fig. 3. 2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per minute maximum. 3. VF<3.5V for devices of VBR≤200V and VF<5.0V for devices of VBR≥201V. Millimeter REF. Min. Max. A 25.4 REF B 8.6 9.1 C 8.6 9.1 D 1.2 1.3 A C B A D R-6 |
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