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FA38SA50LC Datasheet(PDF) 2 Page - International Rectifier |
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FA38SA50LC Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  FA38SA50LC 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 38A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 0.80mH RG = 25Ω, IAS = 38A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 38A, VGS = 0V trr Reverse Recovery Time ––– 830 1300 ns TJ = 25°C, IF = 38A Qrr Reverse RecoveryCharge ––– 15 22 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 38 150 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 1.0mA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.13 Ω VGS = 10V, ID = 23A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 23A ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 500 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 280 420 ID = 38A Qgs Gate-to-Source Charge ––– 37 55 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– 150 220 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 42 ––– VDD = 250V tr Rise Time ––– 340 ––– ID = 38A td(off) Turn-Off Delay Time ––– 200 ––– RG = 10Ω (Internal) tf Fall Time ––– 330 ––– RD = 8Ω, See Fig. 10 Ls Internal Source Inductance ––– 5.0 ––– nH Between lead, and center of die contact Ciss Input Capacitance ––– 6900 ––– VGS = 0V Coss Output Capacitance ––– 1600 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 580 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current |
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