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SCT2H12NZ Datasheet(PDF) 1 Page - Rohm

Part # SCT2H12NZ
Description  N-channel SiC power MOSFET
Download  14 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

SCT2H12NZ Datasheet(HTML) 1 Page - Rohm

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Datasheet
SCT2H12NZ
N-channel SiC power MOSFET
Marking
Taping code
Application
Outline
Inner circuit
Packaging specifications
TO-3PFM
1700V
3.7A
VDSS
ID
PD
RDS(on) (Typ.)
1.15
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Parameter
Symbol
Value
Unit
Tube
-
Type
Packaging
Reel size (mm)
-
SCT2H12NZ
Basic ordering unit (pcs)
Tape width (mm)
-
30
3) Long creepage distance
4) Simple to drive
5) Pb-free lead plating ; RoHS compliant
Features
35W
1) Low on-resistance
2) Fast switching speed
Gate - Source voltage (DC)
VGSS
6 to 22
V
Power dissipation (Tc = 25°C)
PD
35
W
Gate - Source surge voltage (Tsurge ˂ 300nsec)
VGSS-surge
*3
10 to 26
V
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
ID,pulse
*2
9.2
A
VDSS
1700
V
ID
*1
3.7
A
ID
*1
2.6
A
Absolute maximum ratings (Ta = 25°C)
Drain - Source voltage
• Auxilialy power supplies
• Switch mode power supplies
(1) (2)
(3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
(1)
(3)
(2)
*1
1/12
2017.07 - Rev.B


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