1997 Mar 27

3

Philips Semiconductors

Product specification

PNP general purpose transistors

BC556; BC557; BC558

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC556

−−80

V

BC557

−−50

V

BC558

−−30

V

collector-emitter voltage

open base

BC556

−−65

V

BC557

−−45

V

BC558

−−30

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−200

mA

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

250

K/W