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BC557B Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BC557B
Description  PNP general purpose transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BC557B Datasheet(HTML) 4 Page - NXP Semiconductors

 
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1997 Mar 27
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−1
−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−−−4
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −2 mA; VCE = −5V;
see Figs 2, 3 and 4
BC556
125
475
BC557; BC558
125
800
BC556A; BC557A; BC558A
125
250
BC556B; BC557B; BC558B
220
475
BC557C; BC558C
420
800
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−−60
−300 mV
IC = −100 mA; IB = −5mA
−−180 −650 mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA; note 1
−−750 −
mV
IC = −100 mA; IB = −5 mA; note 1
−−930 −
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V; note 2
−600 −650 −750 mV
IC = −10 mA; VCE = −5 V; note 2
−−−820 mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
3
pF
Ce
emitter capacitance
IC =ic = 0; VEB = −0.5 V; f = 1 MHz
10
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
210
dB


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