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Datasheet

SCS220KG

SiC Schottky Barrier Diode

*1 Tc=133°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10

s square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C

Outline

1200V

TO-220AC

20A

65nC

Features

Inner circuit

1) Shorter recovery time

2) Reduced temperature dependence

3) High-speed switching possible

Packaging specifications

Type

Packaging

Tube

Construction

Reel size (mm)

-

Silicon carbide epitaxial planer type

Tape width (mm)

-

Basic ordering unit (pcs)

50

Reverse voltage (repetitive peak)

1200

V

Packing code

C

Marking

SCS220KG

Absolute maximum ratings (Tj = 25°C)

Parameter

Symbol

Value

Unit

Reverse voltage (DC)

1200

V

Continuous forward current

20*

1

A

Surge no repetitive forward current

82*

2

A

310*

3

A

62*

4

A

Repetitive peak forward current

77*

5

A

Total power disspation

210*

6

W

Junction temperature

Tj

175

°C

Range of storage temperature

Tstg

55 to 175

°C

(1) Cathode

(2) Cathode

(3) Anode

(1)

(2)

(3)

(3)

(2)

(1)

1/4

2017.06 - Rev.C