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Datasheet

SCS210KGHR

SiC Schottky Barrier Diode

*1 Tc=146°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10

s square,Tj=25°C

*4 Pw=8.3ms sinusoidal, Tj=150°C, *5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C

A

°C

°C

Tj

Tstg

175

55 to 175

A

Range of storage temperature

Absolute maximum ratings (Tj = 25°C)

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

Unit

Value

Repetitive peak forward current

Total power disspation

Junction temperature

33*

4

1200

10*

1

46*

5

150*

6

45*

2

190*

3

A

Tube

-

Type

Packaging

Reel size (mm)

C

SCS210KG

Basic ordering unit (pcs)

Tape width (mm)

-

50

Marking

Packing code

1200

Features

34nC

1) Shorter recovery time

A

W

Symbol

Construction

Silicon carbide epitaxial planer schottky diode

Parameter

V

V

A

3) High-speed switching possible

AEC-Q101 Qualified

Inner circuit

Packaging specifications

TO-220AC

2) Reduced temperature dependence

1200V

10A

(1) Cathode

(2) Cathode

(3) Anode

(1)

(2)

(3)

(3)

(2)

(1)

1/4

2017.06 - Rev.C