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SCS210KGHR Datasheet(PDF) 1 Page - Rohm |
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SCS210KGHR Datasheet(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Datasheet SCS210KGHR SiC Schottky Barrier Diode *1 Tc=146°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10 s square,Tj=25°C *4 Pw=8.3ms sinusoidal, Tj=150°C, *5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C A IFRM PD °C °C Tj Tstg 175 55 to 175 A Range of storage temperature Absolute maximum ratings (Tj = 25°C) Surge no repetitive forward current Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Unit Value Repetitive peak forward current Total power disspation Junction temperature VR IF IFSM 33* 4 1200 10* 1 46* 5 150* 6 45* 2 190* 3 A VRM Tube - Type Packaging Reel size (mm) C SCS210KG Basic ordering unit (pcs) Tape width (mm) - 50 Marking Packing code 1200 Features 34nC 1) Shorter recovery time A W Symbol Construction Silicon carbide epitaxial planer schottky diode Parameter V V A 3) High-speed switching possible AEC-Q101 Qualified Inner circuit Packaging specifications TO-220AC 2) Reduced temperature dependence 1200V 10A VR IF QC (1) Cathode (2) Cathode (3) Anode (1) (2) (3) (3) (2) (1) 1/4 2017.06 - Rev.C |
Similar Part No. - SCS210KGHR_17 |
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Similar Description - SCS210KGHR_17 |
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