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IL420-X007T Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL420-X007T Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page IL420, IL4208 www.vishay.com Vishay Semiconductors Rev. 2.1, 11-Jun-13 2 Document Number: 83629 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW Derate from 25 °C 1.33 mW/°C OUTPUT Peak off-state voltage IL420 VDRM 600 V IL4208 VDRM 800 V RMS on-state current ITM 300 mA Single cycle surge current ITSM 3A Power dissipation Pdiss 500 mW Derate from 25 °C 6.6 mW/°C COUPLER Isolation test voltage between emitter and detector t = 1 s VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Soldering temperature (1) max. 10 s dip soldering 0.5 mm from case bottom Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.16 1.35 V Reverse current VR = 6 V IR 0.1 10 μA Input capacitance VF = 0 V, f = 1 MHz CIN 40 pF Thermal resistance, junction to ambient Rthja 750 °C/W OUTPUT Off-state current VD = VDRM, Tamb = 100 °C IDRM 10 100 μA On-state voltage IT = 300 mA VTM 1.7 3 V Surge (non-repetitive), on-state current f = 50 Hz ITSM 3A Holding current IH 65 500 μA Latching current VT = 2.2 V IL 500 μA LED trigger current VD = 5 V IFT 12 mA Trigger current temperature gradient I FT/Tj 714 μA/°C Critical rate of rise off-state voltage VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10 000 V/μs VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5000 V/μs Critical rate of rise of voltage at current commutation VD = 230 VRMS, ID = 300 mARMS, TJ = 25 °C dV/dtcrq 8V/μs VD = 230 VRMS, ID = 300 mARMS, TJ = 85 °C dV/dtcrq 7V/μs Critical rate of rise of on-state current commutation dI/dtcrq 12 A/ms Thermal resistance, junction to ambient Rthja 150 °C/W |
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