S-57P1NBL9S-M3T4U datasheet(5/17 Pages) SII

Part #	S-57P1NBL9S-M3T4U

Description	FOR AUTOMOTIVE OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC

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Manufacturer	SII [Seiko Instruments Inc]

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FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC

Rev.1.2_01

S-57P1 S Series

5



Electrical Characteristics

Table 6

(Ta =

+25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Test

Circuit

Power supply voltage

VDD

−

2.7

12.0

26.0

V

−

Current consumption

IDD

Average value

−

3.0

4.0

mA

1

Current consumption

during reverse connection

IDDREV VDD =

−26.0 V

−0.1

−

mA

1

Output voltage

VOUT

IOUT = 10 mA

−

0.4

V

2

Leakage current

ILEAK

Output transistor Nch, VOUT = 26.0 V

−

1

μA

3

Output limit current

IOM

VOUT = 12.0 V

22

−

70

mA

3

Output delay time

tD

−

8.0

−

μs

−

Chopping frequency

fC

−

500

−

kHz

−

Start up time

tPON

−

20

−

μs

4

Output rise time

tR

C = 20 pF, R = 820

Ω

−

2.0

μs

5

Output fall time

tF

C = 20 pF, R = 820

Ω

−

2.0

μs

5

BOP

BRP

Magnetic flux density

applied to this IC (B)

0

Output voltage (VOUT)

(Product with VOUT = "H"

at S pole detection)

Output voltage (VOUT)

(Product with VOUT = "L"

at S pole detection)

S pole

N pole

90%

10%

90%

10%

tD

tF

tD

tR

tD

tR

tD

tF

Figure 3 Operation Timing

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