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S-57P1NBL9S-M3T4U Datasheet(PDF) 5 Page - Seiko Instruments Inc |
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S-57P1NBL9S-M3T4U Datasheet(HTML) 5 Page - Seiko Instruments Inc |
5 / 17 page FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC Rev.1.2_01 S-57P1 S Series 5 Electrical Characteristics Table 6 (Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage VDD − 2.7 12.0 26.0 V − Current consumption IDD Average value − 3.0 4.0 mA 1 Current consumption during reverse connection IDDREV VDD = −26.0 V −0.1 − − mA 1 Output voltage VOUT IOUT = 10 mA − − 0.4 V 2 Leakage current ILEAK Output transistor Nch, VOUT = 26.0 V − − 1 μA 3 Output limit current IOM VOUT = 12.0 V 22 − 70 mA 3 Output delay time tD − − 8.0 − μs − Chopping frequency fC − − 500 − kHz − Start up time tPON − − 20 − μs 4 Output rise time tR C = 20 pF, R = 820 Ω − − 2.0 μs 5 Output fall time tF C = 20 pF, R = 820 Ω − − 2.0 μs 5 BOP BRP Magnetic flux density applied to this IC (B) 0 Output voltage (VOUT) (Product with VOUT = "H" at S pole detection) Output voltage (VOUT) (Product with VOUT = "L" at S pole detection) S pole N pole 90% 10% 90% 10% tD tF tD tR tD tR tD tF Figure 3 Operation Timing |
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