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2SA1309A Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part No. 2SA1309A
Description  TO-92S Plastic-Encapsulate Transistors
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Maker  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SA1309A Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA1309A
TRANSISTOR (PNP)
FEATURES
High Forward Current Transfer Ratio hFE.
Allowing Supply with the Radial Taping.
Optimum for High-density Mounting.
Complementary to 2SC3311A
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.01mA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-10V,IE=0
-100
nA
Collector cut-off current
ICEO
VCE=-10V,IB=0
-1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-100
nA
DC current gain
hFE
VCE=-10V, IC=-2mA
160
460
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA,IB=-5mA
-0.3
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
3.5
pF
Transition frequency
fT
VCE=-10V,IC=-1mA, f=200MHz
80
MHz
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
160-260
210-340
290-460
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
300
mW
RθJA
Thermal Resistance From Junction To Ambient
417
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
JC T
www.cj-elec.com
1
www.cj-elec.com
1
3
2
A,Jun,2014
D,Jul,2016


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