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2SA1300 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SA1300 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) FEATURES High DC Current Gain and Excellent hFE Linearity Low Saturation Voltage MAXIMUM RATINGS ( Ta=25 unless otherwise noted ℃ ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 0.75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~ +15 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter S ymbol est condi M in T yp M ax Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA , IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA , I B=0 -10 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V Collector cut-off current ICBO VCB=-20V , IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-6V, -0.1 µA DC current gain hFE VCE=-1V, I C=-0.5A 140 600 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -100mA -0.82 V Base-emitter voltage VBE IC= -2A, VCE=-1V -1.5 V Transition frequency f T VCE=-1V, IC= -0.5A f = 30MHz 140 MHz Collector Output Capacitance Cob VCB=-10V,IE=0 f=1MHZ 50 CLASSIFICATION OF hFE Rank Y GR BL Range 140-280 200- 400 300-600 TO-92 1. EMITTER 2. COLLECTOR 3. BASE www.cj-elec.com 1 C,Dec,2015 |
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