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SFH628A-2X018 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SFH628A-2X018
Description  Optocoupler, Phototransistor Output, AC Input, Low Input Current
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SFH628A-2X018 Datasheet(HTML) 2 Page - Vishay Siliconix

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SFH628A, SFH6286
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 28-Feb-14
2
Document Number: 83722
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
DC forward current
IF
± 50
mA
Surge forward current
t
≤ 10 μs
IFSM
± 2.5
A
Power dissipation
Pdiss
76
mW
OUTPUT
Collector emitter voltage
VCEO
55
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
tp
≤ 1 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Insulation thickness between
≥ 0.4
mm
Comparative tracking index per DIN IEC112/
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +100
°C
Soldering temperature (1)
max. 10 s, dip soldering distance
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 5 mA
VF
1.1
1.5
V
Capacitance
VR = 0 V, f = 1 MHz
CO
45
pF
Thermal resistance
Rthja
1070
K/W
OUTPUT
Collector emitter leakage current
VCE = 10 V
ICEO
10
200
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
7pF
Thermal resistance
Rthja
500
K/W
COUPLER
Collector emitter saturation
voltage
IF = ± 1 mA, IC = 0.5 mA
SFH628A-2
VCEsat
0.25
0.4
V
SFH6286-2
VCEsat
0.25
0.4
V
IF = ± 1 mA, IC = 0.8 mA
SFH628A-3
VCEsat
0.25
0.4
V
SFH6286-3
VCEsat
0.25
0.4
V
IF = ± 1 mA, IC = 1.25 mA
SFH628A-4
VCEsat
0.25
0.4
V
SFH6286-4
VCEsat
0.25
0.4
V


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