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2SD1513 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SD1513 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 3 page TO – 92 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1513 TRANSISTOR (NPN) FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 16 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V Collector cut-off current ICBO VCB=16V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V,IC=0 0.1 μA hFE(1) VCE=2V, IC=100mA 135 650 DC current gain hFE(2) VCE=2V, IC=1.5A 100 VCE(sat)(1) IC=1A,IB=10mA 0.4 V VCE(sat)(2) IC=1.5A,IB=20mA 0.5 V Collector-emitter saturation voltage VCE(sat)(3) IC=1.5A,IB=75mA 0.5 V Base-emitter saturation voltage VBE (sat) IC=1.5mA,IB=75mA 1.2 V Base-emitter voltage VBE VCE=6V, IC=5mA 0.55 0.65 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 28 pF Transition frequency fT VCE=10V,IC=50mA 100 MHz CLASSIFICATION OF hFE(1) RANK L K U RANGE 135-270 200-400 300-650 Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 16 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Collector Power Dissipation 625 mW RθJA Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015 |
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