2SD1513 datasheet(1/3 Pages) JIANGSU

Part #	2SD1513

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SD1513

TRANSISTOR (NPN)

FEATURES

Low Collector Saturation

High DC Current Gain

Complementary to The 2SB1068 PNP Transistor

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

20

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

16

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

6

V

Collector cut-off current

ICBO

VCB=16V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=6V,IC=0

0.1

μA

hFE(1)

VCE=2V, IC=100mA

135

650

DC current gain

hFE(2)

VCE=2V, IC=1.5A

100

VCE(sat)(1)

IC=1A,IB=10mA

0.4

V

VCE(sat)(2)

IC=1.5A,IB=20mA

0.5

V

Collector-emitter saturation voltage

VCE(sat)(3)

IC=1.5A,IB=75mA

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC=1.5mA,IB=75mA

1.2

V

Base-emitter voltage

VBE

VCE=6V, IC=5mA

0.55

0.65

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

28

pF

Transition frequency

fT

VCE=10V,IC=50mA

100

MHz

CLASSIFICATION OF hFE（1）

RANK

L

K

U

RANGE

135-270

200-400

300-650

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

16

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

2

A

PC

Collector Power Dissipation

625

mW

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

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