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ASW103 Datasheet(PDF) 1 Page - Advanced Semiconductor Business Inc. |
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ASW103 Datasheet(HTML) 1 Page - Advanced Semiconductor Business Inc. |
1 / 8 page 1/8 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 April 2017 ASW103 5 ~ 4000 MHz MMIC Amplifier (Supply Voltage = +3.3 V, TA = +25 C, Zo = 50 ) Parameters Units Typical Frequency MHz 900 2000 Gain dB 17 11 S11 dB -9 -9 S22 dB -15 -15 Output IP31) dBm 30 31 Noise Figure dB 3.7 3.9 Output P1dB dBm 17 18 Current mA 44 44 Device Voltage V +3.3 +3.3 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 900 Gain dB 16 17 S11 dB -9 S22 dB -15 Output IP3 dBm 29 30 Noise Figure dB 3.7 4.0 Output P1dB dBm 16 17 Current mA 39 44 49 Device Voltage V +3.3 Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +4 V Operating Junction Temperature +150 C Input RF Power (CW, 50 matched)* +25 dBm Thermal Resistance 210 C/W Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf Features Description Absolute Maximum Ratings 17 dB Gain at 900 MHz 17 dBm P1dB at 900 MHz 30 dBm Output IP3 at 900 MHz 3.7 dB NF at 900 MHz MTTF > 100 Years Single Supply The ASW103, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both re- ceiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. Application Circuit IF IF (+3.4 V) IF (100 ~350MHz), +5V & 50mA 500 ~ 2500 MHz Product Specifications Typical Performance ASW103 Package Style: SOT89 Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias |
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Similar Description - ASW103_17 |
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